Functional Description:

Precursors: TiCL4, TMA, BDEAS, H2O

Application: ALD (Atomic Layer Deposition Process)

Product features: The entire pipeline system can withstand temperatures up to 200 ℃, meeting the requirements for precursor heating temperature; The valve can be opened and closed within 5ms to achieve pulse gas delivery of precursors, allowing each precursor to alternate between cross adsorption surface reaction desorption on the substrate surface.

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